2SA1981 -0.8 a, -35 v pnp plastic encapsulated transistor elektronische bauelemente 26-jan-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high dc current gain ? complementary pair with 2sc5344 classification of h fe product-rank 2SA1981-o 2SA1981-y range 100~200 160~320 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo -35 v collector to emitter voltage v ceo -30 v emitter to base voltage v ebo -5 v collector current - continuous i c -0.8 a collector power dissipation p c 625 mw thermal resistance from junction to ambient r ja 200 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo -35 - - v i c = -0.5ma, i e =0 collector to emitter breakdown voltage v (br)ceo -30 - - v i c = -1ma, i b =0 emitter to base br eakdown voltage v (br)ebo -5 - - v i e = -0.05ma, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -35v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -5v, i c =0 dc current gain h fe 100 - 320 v ce = -1v, i c = -0.1a collector to emitter saturation voltage v ce(sat) - - -0.5 v i c = -0.5a, i b = -20ma transition frequency f t - 120 - mhz v ce = -5v, i c = -10ma collector output capacitance c ob - 19 - pf v cb = -10v, i e = 0, f=1mhz to-92 ref. millimete r min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g1.27 typ. h1.10 - j 2.42 2.66 k 0.36 0.76 a c e k f d b g h j ? emitte r ? collector ? base
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